Test Preparation on Electronics-II-Physics Test Series For NEET 2020
1.
In the forward bias arrangement of a PN-junction diode
2.
A p-n photodiode is fabricated from a semiconductor with a
band gap of 2.5 eV. It can detect a signal of wavelength
3.
The reverse biasing in a PN junction diode
4.
In the given figure, a diode D is connected to an external
resistance R = 100? and an e.m.f of 3.5 V. If the barrier
potential developed across the diode is 0.5 V, the current in
the circuit will be
